An interview with the co-founders of DG Matrix sheds light on its SiC-based multiport SST backed by multiple patents. DG Matrix is the first company to deliver a commercially available, multiport ...

Navitas’ new UHV SiC use novel trench gate structures to effectively handle common failure modes associated with trench-based MOSFETs. Navitas announced the release of their 2300V and 3300V ultra-high ...

Now, with the demand for “AI factories,” or AI-optimized data centers, there has been a surge in data center resource consumption, moving toward 800-V buses and 100-kW-plus racks. In March 2025, at ...

The two new patents from Huawei reflect a broader trend: the diversification of SiC applications across the electronics value chain. Silicon carbide has become synonymous with wide-bandgap power ...

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There is a constant need for passive components to evolve and adapt to the trends in AI systems. The overall power consumption of AI data centers is surging. Current estimates suggest that AI-focused ...

Cable sizing in power electronics is not a mere detail, but the primary design constraint. It determines safety, efficiency, costs, and reliability. Let’s delve deeper into some concepts related to ...

Negative capacitance has the potential to improve GaN device performance and open new possibilities in power electronics and telecommunications. Gallium nitride transistors have rapidly emerged in ...